Misfit dislocation forming interfacial self-assembly for growth of highly-mismatched III-SB alloys

An emitter device comprising:

• a semiconductor substrate;
• a first doped layer disposed on the semiconductor substrate that is lattice mismatched with the semiconductor substrate;
• an active region disposed over the first doped layer, wherein the active region is proximate to a waveguide material of the semiconductor substrate;
• a second doped layer disposed over the active region;
• and
• a plurality of arrays of misfit dislocations laterally propagated throughout an interface between the first doped layer and the semiconductor substrate, wherein the plurality of arrays of misfit dislocations are operable to cause a density of lattice mismatched dislocation defects of about 106 cm−2 or less in the first doped layer and a lattice relaxation of about 98% or higher between the first doped layer and the semiconductor substrate, and wherein the semiconductor substrate comprises a silicon-on-insulator (SOI), wherein the active region is disposed at about 100 nm or less to a silicon oxide insulator layer of the SOI.