Integrated circuits with aligned (100) NMOS and (110) PMOS FinFET sidewall channels
AssigneeTexas Instruments Incorporated
InventorsWeize Xiong, Cloves Rinn Cleavelin, Angelo Pinto, Rick L. Wise
Life of this patent
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Abstract
An integrated circuit device that includes a plurality of multiple gate FinFETs (MuGFETs) is disclosed. Fins of different crystal orientations for PMOS and NMOS MuGFETs are formed through amorphization and crystal regrowth on a direct silicon bonded (DSB) hybrid orientation technology (HOT) substrate. PMOS MuGFET fins are formed with channels defined by fin sidewall surfaces having (110) crystal orientations. NMOS MuGFET fins are formed with channels defined by fin sidewall surfaces having (100) crystal orientations in a Manhattan layout with the sidewall channels of the different PMOS and NMOS MuGFETs aligned at 0° or 90° rotations.
Claims19
An integrated circuit device, comprising:
- a hybrid orientation substrate including an upper layer having a top surface with a first crystal orientation directly bonded over a lower substrate having a top surface with a second crystal orientation;
- a recrystallized region of the upper layer having the second crystal orientation of the lower substrate and being patterned into a form of a first fin having a top surface with the second crystal orientation and a sidewall surface with the first crystal orientation;
- and
- another region of the upper layer patterned into a form of a second fin having a top surface with the first crystal orientation and a sidewall surface with the second crystal orientation;
- the first fin sidewall surface defining a channel with a first carrier flow direction of a first FinFET, the second fin sidewall defining a channel with a second carrier flow direction of a second FinFET, and the second carrier flow direction being parallel or perpendicular to the first carrier flow direction.
An integrated circuit device, comprising:
- a direct silicon bonded (DSB) hybrid orientation technology (HOT) substrate including an upper silicon layer having a top surface with one of a (100) or (110) crystal orientation directly bonded over a lower silicon substrate having a top surface with the other of the (100) or (110) crystal orientation;
- a recrystallized region of the upper silicon layer having the crystal orientation of the lower silicon substrate and patterned to form a first fin having a top surface with the other crystal orientation and a sidewall surface with the one crystal orientation;
- and
- an unamorphized region of the upper silicon layer patterned to form a second fin having a top surface with the one crystal orientation and a sidewall surface with the other crystal orientation;
- the first fin sidewall surface defining a channel with a current flow direction for one of a an NMOSFinFET or a PMOS FinFET, the second fin sidewall defining a channel with current flow direction for the other of the NMOS FinFET or the PMOSFinFET, and the second current flow direction being parallel to the first current flow direction.
Dependencies are inferred from the claim text.