Semiconductor light emitting device and method for fabricating the same

A semiconductor light emitting device, comprising:

• a semiconductor light emitting portion that includes,
• a first conductivity-type semiconductor layer;
• a second conductivity-type semiconductor layer;
• a light emitting layer which is disposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer;
• a first electrode connected to the first conductivity-type semiconductor layer;
• and
• a second electrode directly connected to the second conductivity-type semiconductor layer;
• wherein,
• the second electrode is separated from an insulator film covering the semiconductor light emitting portion by a separation area;
• a first portion of the insulator film is surrounded by the second electrode, with a first portion of the separation area arranged between the first portion of the insulator film and the second electrode;
• an outer periphery of the second electrode is further surrounded by a second portion of the insulator film, with a second portion of the separation area arranged between the outer periphery of the second electrode and the second portion of the insulator film;
• the semiconductor light emitting portion is disposed between the first and second electrodes;
• the first electrode is disposed across the first conductivity-type semiconductor layer from the light emitting layer;
• the second electrode is disposed across the second conductivity-type semiconductor layer from the light emitting layer;
• and
• the first and second electrodes are alternately disposed, in a plane view of the semiconductor light emitting portion.

A semiconductor light emitting device, comprising:

• a semiconductor light emitting portion that includes,
• a first conductivity-type semiconductor layer;
• a second conductivity-type semiconductor layer;
• a light emitting layer which is disposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer;
• a first electrode connected to the first conductivity-type semiconductor layer;
• and
• a second electrode directly connected to the second conductivity-type semiconductor layer;
• wherein,
• the second electrode is separated from an insulator film covering the semiconductor light emitting portion by a separation area;
• a first portion of the insulator film is surrounded by the second electrode, with a first portion of the separation area arranged between the first portion of the insulator film and the second electrode;
• a continuous layer made of metal or alloy materials is disposed on outer sides of the second electrode and the insulator film;
• the separation area comprises one of a space, and a layer made of the metal or alloy material that is disposed in the separation area;
• a substrate is disposed on the outer sides of the second electrode and the insulator film;
• the semiconductor light emitting portion is disposed between the first and second electrodes;
• the first electrode is disposed across the first conductivity-type semiconductor layer from the light emitting layer;
• the second electrode is disposed across the second conductivity-type semiconductor layer from the light emitting layer;
• and
• the first and second electrodes are alternately disposed, in a plane view of the semiconductor light emitting portion.