Semiconductor light emitting device and method for manufacturing the same

A semiconductor light emitting device comprising:

• a first cladding layer of a first conduction type;
• a second cladding layer of a second conduction type;
• an active layer of the second conduction type provided between the first cladding layer and the second cladding layer;
• a diffusion control layer formed by sequentially stacking an intermediate layer of the second conduction type and a first transparent conductive layer of the second conduction type on the second cladding layer in this order, the intermediate layer being lattice matched with the first cladding layer;
• a second transparent conductive layer of the second conduction type, provided on the diffusion control layer and having an impurity in a concentration lower than an impurity concentration of the diffusion control layer;
• and
• a third transparent conductive layer of the second conduction type, provided on the second transparent conductive layer and having an impurity in a concentration higher than the impurity concentration of the second transparent conduction layer,
• wherein a boundary between the intermediate layer and the first transparent conductive layer is a lattice mismatch interface.