Pulsed growth of catalyst-free growth of GaN nanowires and application in group III nitride semiconductor bulk material

A nanowire array comprising:

• a support comprising a plurality of surface regions, wherein each of the plurality of surface regions has a cross-sectional size;
• a group III-N nanowire extending from each of the plurality of surface regions of the support to form the nanowire array, wherein each group III-N nanowire is oriented along a same crystallographic direction, maintains a cross-sectional size that corresponds to the size of the surface region, and has a length of about 10 nm or greater;
• and
• a group III-N substrate structure coalesced from the nanowire array, wherein the group HI-N substrate structure comprises GaN.

A nanowire array comprising:

• a support comprising a plurality of surface regions, wherein each of the plurality of surface regions has a cross-sectional size;
• a group III-N nanowire extending from each of the plurality of surface regions of the support to form the nanowire array, wherein each group III-N nanowire is oriented along a same crystallographic direction, maintains a cross-sectional size that corresponds to the size of the surface region, and has a length of about 10 nm or greater;
• and
• a multiple quantum well (MQW) active structure disposed on at least a portion of each group III-N nanowire of the nanowire array, wherein the MOW active structure comprises a plurality of shells formed of lnGaN, AIGaN or GaN.