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AssigneeCree, Inc.
InventorsCem Basceri, Yuri Khlebnikov, Igor Khlebnikov, Cengiz Balkas, Murat N. Silan, Hudson McD. Hobgood, Calvin H. Carter, Jr., Vijay Balakrishna, Robert T. Leonard, Adrian R. Powell, Valeri T. Tsvetkov, Jason R. Jenny
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Micropipe-free, single crystal, silicon carbide (SiC) and related methods of manufacture are disclosed. The SiC is grown by placing a source material and seed material on a seed holder in a reaction crucible of the sublimation system, wherein constituent components of the sublimation system including the source material, reaction crucible, and seed holder are substantially free from unintentional impurities. By controlling growth temperature, growth pressure, SiC sublimation flux and composition, and a temperature gradient between the source material and the seed material or the SiC crystal growing on the seed material during the PVT process, micropipe-inducing process instabilities are eliminated and micropipe-free SiC crystal is grown on the seed material.
A micropipe-free silicon carbide (SiC) wafer having a minimum diameter selected from a group of diameters consisting of at least 2 inches, at least 3 inches, and at least 100 mm, sliced from a SiC crystal grown in the nominal c-axis direction by a process of placing a source material and a seed material in a reaction crucible of a sublimation system, wherein constituent components of the sublimation system including at least the source material and the reaction crucible are substantially free from unintentional impurities, and controlling growth temperature, growth pressure, SiC sublimation flux and composition, and a temperature gradient between the source material and the seed material or a SiC crystal growing on the seed material during a physical vapor transport (PVT) process to eliminate micropipe-inducing process instabilities wherein the micropipe-free silicon carbide (SiC) wafer has a micropipe density of zero.
A micropipe-free silicon carbide (SiC) wafer having a minimum diameter of 100 mm to 125 mm sliced from a SiC crystal grown in the nominal c-axis direction by a process of placing a source material and a seed material in a reaction crucible of a sublimation system, wherein constituent components of the sublimation system including at least the source material and the reaction crucible are substantially free from unintentional impurities, and controlling growth temperature, growth pressure, SiC sublimation flux and composition, and a temperature gradient between the source material and the seed material or a SiC crystal growing on the seed material during a physical vapor transport (PVT) process to eliminate micropipe-inducing process instabilities wherein the micropipe-free silicon carbide (SiC) wafer has a micropipe density of zero.
A micropipe-free silicon carbide (SiC) wafer having a minimum diameter of at least 100 mm to 150 mm sliced from a SiC crystal grown in the nominal c-axis direction by a process of placing a source material and a seed material in a reaction crucible of a sublimation system, wherein constituent components of the sublimation system including at least the source material and the reaction crucible are substantially free from unintentional impurities, and controlling growth temperature, growth pressure, SiC sublimation flux and composition, and a temperature gradient between the source material and the seed material or a SiC crystal growing on the seed material during a physical vapor transport (PVT) process to eliminate micropipe-inducing process instabilities wherein the micropipe-free silicon carbide (SiC) wafer has a micropipe density of zero.
Dependencies are inferred from the claim text.