Manufacturing method and structure of LED chip
AssigneeHelio Optoelectronics Corporation
InventorsWei-Tai Cheng, Ming-Hung Chen, Ching-Jen Pan
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Abstract
A manufacturing method and a structure of a light-emitting diode (LED) chip are disclosed. The method includes the steps of: providing a conductive block; providing an epitaxial block; bonding; removing an epitaxial substrate; making independent LEDs; forming a dielectric layer; and making electrical connection. A first LED, a second LED, and a third LED are formed on the conductive block, wherein the first and second LEDs are electrically connected in series, and the second and third LEDs are electrically connected in parallel. Thus, a basic unit with a flexible design of series- and parallel-connected LEDs can be formed to increase the variety and application of LED chip-based designs.
Claims12
A manufacturing method of a light-emitting diode (LED) chip, comprising the steps of:
- providing a conductive block, wherein the conductive block comprises:
- a conductive substrate having a first region and a second region;
- a first dielectric layer formed on the first region;
- and a first metal layer formed on the second region and the first dielectric layer;
- providing an epitaxial block, wherein the epitaxial block comprises:
- an epitaxial substrate;
- an epitaxial layer formed on the epitaxial substrate;
- and a second metal layer formed on a semiconductor side of the epitaxial layer;
- bonding, wherein the first metal layer is bonded with the second metal layer so that the conductive block and the epitaxial block are bonded together to form a bonded block;
- removing the epitaxial substrate, wherein the epitaxial substrate is removed from the bonded block so as to form an LED block;
- making independent LEDs, wherein the LED block is etched so that at least a first LED is formed on the first region and at least a second LED and at least a third LED are formed on the second region;
- forming a second dielectric layer, wherein the second dielectric layer is formed between the at least a first LED, the at least a second LED, and the at least a third LED;
- and
- making electrical connection, wherein a first conductive layer is formed on the second dielectric layer to series-connect each said first LED and each said second LED, and a second conductive layer is formed on the second dielectric layer to parallel-connect each said second LED and each said third LED.
A light-emitting diode (LED) chip structure, comprising:
- a conductive block comprising:
- a conductive substrate having a first region and a second region;
- a first dielectric layer formed on the first region;
- and a plurality of first metal layers independently connected to the second region and the first dielectric layer;
- at least a first LED fixedly provided on the first dielectric layer via bonding between one of a plurality of second metal layers and a said first metal layer;
- at least a second LED fixedly provided on the second region via bonding between a said second metal layer and a said first metal layer, wherein the at least a second LED is connected in series to the at least a first LED by one of a plurality of second dielectric layers and a first conductive layer;
- and
- at least a third LED fixedly provided on the second region via bonding between a said second metal layer and a said first metal layer, wherein the at least a third LED is connected in parallel to the at least a second LED by a said second dielectric layer and a second conductive layer.
Dependencies are inferred from the claim text.