p-Type MgZnO-based thin film and semiconductor light emitting device

A semiconductor light emitting device comprising:

• a substrate made of an MgZnO-based semiconductor;
• a light emitting layer made of an MgZnO-based semiconductor formed on the substrate;
• and
• a p-type MgZnO-based layer formed on the light emitting layer and containing p-type impurities which become an acceptor,
• wherein a concentration of n-type impurities made of a group IV element in the p-type MgZnO-based layer is 1.0×1017 cm−3 or less, and a concentration of the p-type impurities is 5.0×1018 cm−3 or more,
• wherein steps substantially perpendicular to an m-axis direction are formed at a substantially equal interval on a surface of a +c-plane on which the p-type MgZnO-based thin film is subjected to be crystal growth.

A semiconductor light emitting device comprising:

• a substrate made of an MgZnO-based semiconductor;
• a light emitting layer made of an MgZnO-based semiconductor formed on the substrate;
• and
• a p-type MgZnO-based layer formed on the light emitting layer and containing p-type impurities which become an acceptor,
• wherein a concentration of n-type impurities made of a group III element in the p-type MgZnO-based layer is 1.0×1016 cm−3 or less, and a concentration of the p-type impurities is 5.0×1018 cm−3 or more,
• wherein steps substantially perpendicular to an m-axis direction are formed at a substantially equal interval on a surface of a +c-plane on which the p-type MgZnO-based thin film is subjected to be crystal growth.