Graphene grown substrate and electronic/photonic integrated circuits using same
AssigneeHitachi, Ltd.
InventorsMakoto Okai, Motoyuki Hirooka, Yasuo Wada
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Abstract
A substrate having a graphene film grown thereon according to the present invention includes: a base substrate; a patterned aluminum oxide film formed on the base substrate, the patterned aluminum oxide film having an average composition of Al2−xO3+x (where x is 0 or more); and a graphene film preferentially grown only on the patterned aluminum oxide film, the graphene film having one or more graphene atomic layers, the graphene film growing parallel to a surface of the patterned aluminum oxide film, the graphene film having an electrical conductivity of 1×104 S/cm or more measured by a four-probe resistive method using an inter-voltage-probe distance of 0.2 mm.
Claims14
A substrate having a graphene film grown thereon, comprising:
- a base substrate;
- a patterned aluminum oxide film formed on the base substrate, the patterned aluminum oxide film having a composition of Al2−xO3+x (where x is 0 or more), a desired circuit pattern of the patterned aluminum oxide film being formed on the base substrate, no aluminum oxide film bein disposed on the base substrate in regions other than the desired circuit pattern;
- and
- a graphene film preferentially grown directly and only on the patterned aluminum oxide film, the graphene film having one or more graphene atomic layers, the graphene film growing parallel to a surface of the patterned aluminum oxide film, the graphene film consisting of a plurality of graphene domains having an average size from 25 to 41 nm, the graphene film having an electrical conductivity of 1×104 S/cm or more measured by a four-probe resistive method using an inter-voltage-probe distance of 0.2 mm.
A substrate having a graphene film grown thereon, comprising:
- a base substrate;
- a patterned aluminum oxide film formed on the base substrate, the patterned aluminum oxide film having a composition of Al2−xO3+x (where x is 0 or more), a desired circuit pattern of the patterned aluminum oxide film being formed on the base substrate, no aluminum oxide film being disposed on the base substrate in regions other than the desired circuit pattern;
- and
- a graphene film preferentially grown directly and only on the patterned aluminum oxide film, the graphene film having one or more graphene atomic layers, the graphene film growing parallel to a surface of the patterned aluminum oxide film, the graphene film consisting of a plurality of graphene domains having an average size from 25 to 41 nm, the plurality of graphene domains being electrically connected with one another, the graphene film having an electrical conductivity of 1×104 S/cm or more through the plurality of graphene domains.
Dependencies are inferred from the claim text.