Nonvolatile memory device and method of manufacturing the same
AssigneeKabushiki Kaisha Toshiba
InventorJunichi Wada
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Abstract
According to one embodiment, a nonvolatile memory device includes a first wire, a second wire and a nonvolatile memory cell. The first wire is formed to extend in a first direction, and the second wire is formed at height different from height of the first wire and to extend in a second direction. The nonvolatile memory cell is arranged to be held between the first wire and the second wire in a poison where the first wire and the second wire cross. The nonvolatile memory cell includes a nonvolatile storage layer and a current limiting resistance layer connected in series to the nonvolatile storage layer and having resistance of 1 kilo-ohm to 1 mega-ohm.
Claims9
A nonvolatile memory device comprising:
- a first wire extending in a first direction;
- a second wire formed at height different from height of the first wire and extending in a second direction;
- and
- a nonvolatile memory cell arranged to be held between the first wire and the second wire in a position where the first wire and the second wire cross, wherein
- the nonvolatile memory cell includes a nonvolatile storage layer and a current limiting resistance layer connected in series to the nonvolatile storage layer and having resistance of 1 kilo-ohm to 1 mega-ohm,
- the nonvolatile memory cell has a structure in which the nonvolatile storage layer is held between a pair of conductive layers, and
- one of the pair of conductive layers or both the pair of conductive layers function as the current limiting resistance layer.
Dependencies are inferred from the claim text.