Semiconductor device, method for manufacturing semiconductor device, apparatus for manufacturing semiconductor device, and method for evaluating semiconductor device
AssigneeToyota Jidosha Kabushiki Kaisha
InventorYasutaka Takeuchi
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Abstract
The present teachings provide a method for manufacturing a semiconductor device including a semiconductor substrate and a lower surface electrode in which an aluminum containing layer, a titanium layer, a nickel layer, and a nickel oxidation-prevention layer are laminated in order from a semiconductor substrate side, wherein the titanium layer of the lower electrode is formed by sputtering in an atmosphere of a partial pressure of oxygen being equal to or less than 5×10−6 Pa.
Claims3
An apparatus for manufacturing a semiconductor device including a semiconductor substrate and a lower surface electrode in which an aluminum containing layer, a titanium layer, a nickel layer, and a nickel oxidation-prevention layer are laminated in order from a semiconductor substrate side, the apparatus comprising:
- a sputtering apparatus;
- a detector that detects a partial pressure of oxygen in a chamber of the sputtering apparatus;
- a decompressor that adjusts the partial pressure of oxygen in the chamber;
- and
- a controller that is electrically connected to the decompressor and the detector, and controls the decompressor according to a detected value of the detector and decreases the partial pressure of oxygen in the chamber to be within equal to or more than 3×10−6 Pa and equal to or less than 5×10−6 Pa when the sputtering apparatus forms the titanium layer by sputtering.
A method for evaluating quality of a semiconductor device including a semiconductor substrate and a lower surface electrode in which an aluminum containing layer, a titanium layer, a nickel layer, and a nickel oxidation-prevention layer are laminated in order from a semiconductor substrate side,
- wherein the semiconductor device is judged as having superior quality in a case where an oxygen atom counts detected by Secondary Ion Mass Spectrometry in an interface between the titanium layer and the nickel layer is equal to or less than a threshold number that is predeterminedly set within a range equal to or less than 2×104 counts per second.
Dependencies are inferred from the claim text.