Solid-state imaging device, method for manufacturing the same, and imaging apparatus

An imaging apparatus characterized by comprising:

• a light-condensing optical portion which condenses incident light;
• a solid-state imaging device, operative to receive and photoelectrically convert the incident light condensed in the light-condensing optical portion into a signal charge;
• and
• a signal processing portion, operative to process the signal charge,
• wherein the solid-state imaging device includes
• (a) a first film on or over a light-receiving surface of the light-receiving portion, the first film formed by a material selected from the group consisting of a hafnium oxide, aluminum oxide, zirconium oxide, tantalum oxide, titanium oxide, lanthanum oxide, praseodymium oxide, cerium oxide, neodymium oxide, promethium oxide, samarium oxide, europium oxide, gadolinium oxide, terbium oxide, dysprosium oxide, holmium oxide, erbium oxide, thulium oxide, ytterbium oxide, lutetium oxide, yttrium oxide, hafnium nitride, aluminum nitride, hafnium oxide nitride, and aluminum oxide nitride;
• (b) a second film of approximately 1 nm thickness between the light-receiving surface and the first film;
• and
• (c) a hole accumulation layer at the light-receiving surface side of the light-receiving portion, the hole accumulation layer created due to the existence of the first film.

A method for manufacturing a solid-state imaging device having a light-receiving portion operative to photoelectrically convert incident light comprising:

• using atomic layer deposition, forming a first film on or over a light-receiving surface of the light-receiving portion;
• and
• while forming the first film, forming a second film between the light-receiving surface and the first film,
• wherein,
• a hole accumulation layer is formed at the light-receiving surface of the light-receiving portion due to the existence of the first film, and
• the first film is formed by a material selected from the group consisting of a hafnium oxide, aluminum oxide, zirconium oxide, tantalum oxide, titanium oxide, lanthanum oxide, praseodymium oxide, cerium oxide, neodymium oxide, promethium oxide, samarium oxide, europium oxide, gadolinium oxide, terbium oxide, dysprosium oxide, holmium oxide, erbium oxide, thulium oxide, ytterbium oxide, lutetium oxide, yttrium oxide, hafnium nitride, aluminum nitride, hafnium oxide nitride, and aluminum oxide nitride.