Reduction of delay between subsequent capture operations of a light-detection device

A light-detection device comprising:

• an avalanche photodiode implemented in a deep submicron CMOS technology to operate in a Geiger mode of operation;
• and
• a set of control modules to reduce a dead time of the device,
• wherein the set of control modules comprises:
• a passive quench control module of the light-detection device to create an avalanche current that generates a high voltage at an output of a second inverter gate of the light-detection device;
• an active quench control module of the light-detection device to reduce a dead time of the light-detection device;
• and
• a reset module of the light-detection device to create a low voltage an output of the second inverter gate and to create an active reset of a PMOS transistor of the light-detection device.

A method comprising:

• generating an avalanche current through an avalanche photodiode implemented in a deep submicron CMOS technology;
• reducing a dead time through an active quench control mode;
• generating a high voltage at an output of a second inverter gate when the avalanche current is created;
• creating a low voltage as an output of the second inverter gate in a reset mode;
• and
• resetting a PMOS transistor through the reset mode.