Thin film photoelectric conversion device having a stacked transparent oxide and carbon intermediate layer

A thin-film photoelectric conversion device comprising a plurality of silicon-based photoelectric conversion units connected in series through an interlayer, wherein

• the interlayer is a transparent oxide layer and n pairs of layers stacked therebehind (n is an integer of 1 or more), wherein each pair of layers is a carbon layer and a transparent oxide layer stacked in this order, such that the carbon layer is connected to the photoelectric conversion units through the transparent oxide layers,
• wherein a refractive index of one or more of the carbon layers is 1.25 or more and 1.90 or less against a light with a wavelength of 600 nm.

A thin-film photoelectric conversion device comprising a plurality of silicon-based photoelectric conversion units connected in series through an interlayer, wherein

• the interlayer is a transparent oxide layer and n pairs of layers stacked therebehind (n is an integer of 1 or more), wherein each pair of layers is a carbon layer and a transparent oxide layer stacked in this order, such that the carbon layer is connected to the photoelectric conversion units through the transparent oxide layers,
• wherein any one of the carbon layers comprises diamond-like carbon.