Photoelectric conversion device and manufacturing method thereof

A photoelectric conversion device comprising:

• a first semiconductor layer containing an impurity element imparting one conductivity type, which is formed using a microcrystalline semiconductor and provided over a first electrode;
• a second semiconductor layer which is provided over the first semiconductor layer;
• a third semiconductor layer containing an impurity element imparting a conductivity type which is opposite to the one conductivity type, which is provided over the second semiconductor layer;
• and
• a second electrode which is provided over the third semiconductor layer,
• wherein the second semiconductor layer includes on an interface side between the first semiconductor layer and the second semiconductor layer, a first crystal region having a three-dimensional shape which decreases in width from an interface between the first semiconductor layer and the second semiconductor layer toward the third semiconductor layer,
• wherein the second semiconductor layer includes a second crystal region having a conical or pyramidal shape,
• wherein the conical or pyramidal shape includes a vertex in the second semiconductor layer and a base in an interface between the second semiconductor layer and the third semiconductor layer,
• wherein the conical or pyramidal shape decreases in width from the interface between the second semiconductor layer and the third semiconductor layer toward the first semiconductor layer, and
• wherein the second semiconductor layer has a plane including neither the first crystal region nor the second crystal region, and being parallel to the interface between the first semiconductor layer and the second semiconductor layer.