Chalcogenide absorber layers for photovoltaic applications and methods of manufacturing the same
AssigneeZetta Research and Development LLC—AQT Series
InventorsErol Girt, Mariana Rodica Munteanu
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Abstract
In one example embodiment, a method includes depositing one or more thin-film layers onto a substrate. More particularly, at least one of the thin-film layers comprises at least one electropositive material and at least one of the thin-film layers comprises at least one chalcogen material suitable for forming a chalcogenide material with the electropositive material. The method further includes annealing the one or more deposited thin-film layers at an average heating rate of or exceeding 1 degree Celsius per second. The method may also include cooling the annealed one or more thin-film layers at an average cooling rate of or exceeding 0.1 degrees Celsius per second.
Claims44
A method comprising:
- depositing a film layer comprising Cuα(In1-xGax)β (where α>β, 0≦x≦1) and one or more of Se, Te, or S;
- annealing the deposited film layer at an average heating rate of at least approximately 1 degree Celsius per second;
- removing from the film layer excess material comprising Cu and one or more of S, Se, or Te;
- and
- cooling the annealed film layer after removal of the excess material at an average cooling rate of at least approximately 0.1 degrees Celsius per second.
Dependencies are inferred from the claim text.