Semiconductor device and manufacturing method thereof
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsShunpei Yamazaki, Jun Koyama
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Abstract
An object is to provide a semiconductor device with a novel structure and favorable characteristics. A semiconductor device includes an oxide semiconductor layer, a source electrode and a drain electrode electrically connected to the oxide semiconductor layer, a gate insulating layer covering the oxide semiconductor layer, the source electrode, and the drain electrode, and a gate electrode over the gate insulating layer. The source electrode and the drain electrode include an oxide region formed by oxidizing a side surface thereof. Note that the oxide region of the source electrode and the drain electrode is preferably formed by plasma treatment with a high frequency power of 300 MHz to 300 GHz and a mixed gas of oxygen and argon.
Claims9
A semiconductor device comprising:
- an oxide semiconductor layer formed over a substrate;
- a source electrode and a drain electrode formed over the oxide semiconductor layer;
- the source electrode and the drain electrode, each is electrically connected to the oxide semiconductor layer;
- a gate insulating layer formed over the oxide semiconductor layer, the source electrode and the drain electrode;
- and
- a gate electrode formed over the gate insulating layer,
- wherein the source electrode and the drain electrode include an oxide region formed by oxidizing a side surface of the source electrode and the drain electrode.
A manufacturing method of a semiconductor device, comprising:
- forming an oxide semiconductor layer over a substrate;
- forming a source electrode and a drain electrode electrically connected to the oxide semiconductor layer;
- oxidizing a side surface of the source electrode and the drain electrode;
- forming a gate insulating layer over the oxide semiconductor layer, the source electrode, and the drain electrode after oxidizing the side surface of the source electrode and the drain electrode;
- and
- forming a gate electrode over the gate insulating layer.
Dependencies are inferred from the claim text.