Method of manufacturing semiconductor device, method of processing substrate, and substrate processing apparatus

A method of processing a substrate, comprising steps of:

• (a) supplying a source gas containing an element into a process vessel accommodating the substrate under a condition where a CVD reaction is caused to form a first layer including the element on the substrate;
• (b) supplying a carbon-containing gas into the process vessel to form a layer including a carbon on the first layer, thereby forming a second layer including the element and the carbon;
• (c) supplying the source gas containing the element into the process vessel under the condition where the CVD reaction is caused to additionally form a layer including the element on the second layer, thereby forming a third layer including the element and the carbon;
• (d) supplying a nitrogen-containing gas into the process vessel to nitride the third layer, thereby forming a carbonitride layer serving as a fourth layer including the element, the carbon and nitrogen;
• and
• (e) performing a cycle including the steps (a) through (d) a predetermined number of times to form a carbonitride film having a predetermined thickness on the substrate.

A substrate processing apparatus comprising:

• a process vessel configured to accommodate a substrate;
• a heater configured to heat the substrate in the process vessel;
• a source gas supply system configured to supply a source gas containing an element into the process vessel;
• a carbon-containing gas supply system configured to supply a carbon containing gas into the process vessel;
• a nitrogen-containing gas supply system configured to supply a nitrogen-containing gas into the process vessel;
• a pressure regulating unit configured to regulate a pressure in the process vessel;
• and
• a control unit configured to control the heater, the source gas supply system, the carbon-containing gas supply system, the nitrogen-containing gas supply system, and the pressure regulating unit such that a carbonitride film having a predetermined thickness is formed on the substrate by carrying out processes of (a) supplying the source gas containing the element into a process vessel accommodating the substrate under a condition where a CVD reaction is caused to form a first layer including the element on the substrate;
• (b) supplying the carbon-containing gas into the process vessel to form a layer including a carbon on the first layer, thereby forming a second layer including the element and the carbon;
• (c) supplying the source gas containing the element into the process vessel under the condition where the CVD reaction is caused to additionally form a layer including the element on the second layer, thereby forming a third layer including the element and the carbon;
• (d) supplying the nitrogen-containing gas into the process vessel to nitride the third layer, thereby forming a carbonitride layer serving as a fourth layer including the element, the carbon and a nitrogen;
• and (e) performing a cycle including the processes (a) through (d) a predetermined number of times.