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US 8,409,990 B2Granted
Chemical-mechanical polishing compositions and methods of making and using the same
AssigneeFerro Corporation
InventorBradley M. Kraft
Life of this patent
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Abstract
The present invention provides an aqueous CMP slurry composition that includes abrasive particles and from about 0.01% to the limit of solubility in water of a compound according to Formula (I): wherein only one of R1, R2, R3, R4 and R5 is a hydroxyl group (—OH), only one of R1, R2, R3, R4 and R5 is a methoxy group (—OCH3), and the three of R1, R2, R3, R4 and R5 that are not either a hydroxyl group (—OH) or a methoxy group (—OCH3) are hydrogen atoms (—H).
Claims14
An aqueous CMP slurry composition consisting of:
- from about 1.0% to about 8.0% by weight of ceria abrasive particles having a mean diameter of from about 20 nm to about 1000 nm;
- from about 0.01% by weight to the limit of solubility in water of
- vanillic acid;
- an amount of nitric acid sufficient to adjust the pH of the CMP slurry composition to from about 2.8 to about 6;
- from about 0.1% to 10.0% by weight proline;
- and
- optionally, one or more selected from the group consisting of isopropyl alcohol and a biocide.
4 more elements
A method for removing silicon dioxide from a surface of a workpiece by chemical-mechanical polishing, the method comprising:
- (i) providing an aqueous CMP slurry composition between a polishing pad and the surface of the workpiece, the aqueous CMP slurry composition consisting of:
- (a) from about 1.0% to about 8.0% by weight of ceria abrasive particles having a mean diameter of from about 20 nm to about 1000 nm,
- (b) from about 0.01% by weight to the limit of solubility in water of
- vanillic acid,
- (c) an amount of nitric acid sufficient to adjust the pH of the CMP slurry composition to from about 2.8 to about 6,
- (d) from about 0.1% to about 10.0% by weight proline, and
- (e) optionally, one or more selected from the group consisting of isopropyl alcohol and a biocide;
- and
- (ii) pressing the polishing pad and the surface of the workpiece together with the CMP slurry composition disposed therebetween while the polishing pad and the surface of the workpiece are moving relative to each other to abrade silicon dioxide from the surface.
6 more elements
Dependencies are inferred from the claim text.