Structure and method to fabricate a body contact
AssigneeInternational Business Machines Corporation
InventorsChengwen Pei, Roger Allen Booth, Jr., Kangguo Cheng, Joseph Ervin, Ravi M. Todi, Geng Wang
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Abstract
A structure and method to fabricate a body contact on a transistor is disclosed. The method comprises forming a semiconductor structure with a transistor on a handle wafer. The structure is then inverted, and the handle wafer is removed. A silicided body contact is then formed on the transistor in the inverted position. The body contact may be connected to neighboring vias to connect the body contact to other structures or levels to form an integrated circuit.
Claims12
A method for fabricating a body contact on a transistor having a body, source, drain, and gate, the transistor disposed on a dielectric layer, comprising:
- forming a cavity in the dielectric layer to expose a portion of the body of the transistor;
- forming a silicide layer on the exposed portion of the body;
- depositing a metal liner on the silicide layer;
- and depositing a layer of polysilicon on the metal liner.
A method for fabricating a body contact on a transistor having a body, source, drain, and gate, the transistor disposed on a dielectric layer, comprising:
- forming a cavity in the dielectric layer to expose a portion of the body of the transistor;
- forming a cavity in the dielectric layer to expose an active silicon area;
- forming a silicide layer on the exposed portion of the body;
- depositing a metal liner on the silicide layer;
- depositing a polysilicon layer on the metal liner;
- and
- forming a void in the polysilicon layer, the void disposed between the body and the active silicon area.
Dependencies are inferred from the claim text.