Method of manufacturing semiconductor device and substrate processing apparatus

A method of manufacturing a semiconductor device, comprising:

• (a) forming a first layer including a first element being able to become solid state by itself on a substrate by supplying a gas containing the first element into a process vessel accommodating the substrate under a condition where a CVD reaction is caused;
• (b) supplying a gas containing a second element being able to become solid state by itself or being unable to become solid state by itself into the process vessel to form a second layer including the first element and the second element by forming a layer including the second element on the first layer or by modifying the first layer;
• (c) modifying the second layer by supplying a gas containing a third element being unable to become solid state by itself into the process vessel to form a third layer including the first element, the second element and the third element;
• and (d) performing a cycle comprising the steps (a) through (c) at least once to form a thin film having a predetermined thickness and including the first element, the second element and the third element.

A method of manufacturing a semiconductor device, comprising:

• (a) forming a first layer including a first element being able to become solid state by itself on a substrate by supplying a gas containing the first element into a process vessel accommodating the substrate under a condition where a CVD reaction is cased;
• (b) supplying a gas containing a second element being able to become solid state by itself or being unable to become solid state by itself into the process vessel to form a second layer including the first element and the second element by forming a layer including the second element on the first layer or by modifying the first layer;
• (c) supplying a gas containing a third element being able to become solid state by itself or being unable to become solid state by itself into the process vessel to form a third layer including the first element, the second element and the third element by forming a layer including the third element on the second layer or by modifying the second layer;
• and (d) modifying the third layer by supplying a gas containing a fourth element being unable to become solid state by itself into the process vessel to form a fourth layer including the first element, the second element, the third element and the fourth element;
• and (e) performing a cycle comprising the steps (a) through (d) at least once to form a thin film having a predetermined thickness and including the first element, the second element, the third element and fourth element.