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AssigneeNovellus Systems, Inc.
InventorsAnand Chandrashekar, Mirko Glass, Raashina Humayun, Michal Danek, Kaihan Ashtiani, Feng Chen, Lana Hiului Chan, Anil Mane
Estimating the term…
Methods of forming low resistivity tungsten films with good uniformity and good adhesion to the underlying layer are provided. The methods involve forming a tungsten nucleation layer using a pulsed nucleation layer process at low temperature and then treating the deposited nucleation layer prior to depositing the bulk tungsten fill. The treatment operation lowers resistivity of the deposited tungsten film. In certain embodiments, the depositing the nucleation layer involves a boron-based chemistry in the absence of hydrogen. Also in certain embodiments, the treatment operations involve exposing the nucleation layer to alternating cycles of a reducing agent and a tungsten-containing precursor. The methods are useful for depositing films in high aspect ratio and/or narrow features. The films exhibit low resistivity at narrow line widths and excellent step coverage.
A method of forming a tungsten film on a substrate in a reaction chamber, the method comprising:
A method comprising:
An apparatus for depositing tungsten film on a substrate comprising:
Dependencies are inferred from the claim text.