Apparatus and method for manufacturing multi-component oxide heterostructures
AssigneeNexGen Semi Holding, Inc.
InventorsMark Joseph Bennahmias, Michael John Zani, Jeffrey Winfield Scott
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Abstract
Certain embodiments disclosed herein relate to the formation of multi-component oxide heterostructures (MCOH) using surface nucleation to pattern the atomic layer deposition (ALD) of perovskite material followed by patterned etch and metallization to produce ultra-high density MCOH nano-electronic devices. Applications include ultra-high density MCOH memory and logic, as well as electronic functionality based on single electrons, for example a novel flash memory cell Floating-Gate (FG) transistor with LaAlO3 as a gate tunneling dielectric. Other types of memory devices (DIMMS, DRAM, and DDR) made with patterned ALD of LaAlO3 as a gate dielectric are also possible.
Claims31
A method of forming an array of multi-component oxide heterostructures, the method comprising:
- exposing a substrate comprising a SrTiO3 top layer to a digital beam in a first chamber, the first chamber comprising a focused ion beam to introduce site specific surface nucleation and to generate a density of oxygen vacancies;
- moving the exposed substrate into a second chamber to induce thermal activation of said substrate;
- moving the thermally activated substrate into a third chamber;
- introducing a lanthanum containing precursor into the third chamber;
- introducing an aluminum containing precursor into the third chamber;
- and
- controlling the introducing of the lanthanum containing precursor and the introducing of the aluminum containing precursor to form by patterned atomic layer deposition a dielectric layer comprising LaAlO3 having a thickness of 2 to 4 unit cells to form a well-defined high density array of multi-component oxide heterostructures.
A method of forming a multi-component oxide heterostructure, the method comprising:
- forming nucleation sites on a SrTiO3 surface of a substrate with a focused ion beam by chemically modifying portions of the surface of the substrate;
- depositing at least one layer of LaAlO3 at the nucleation sites.
A method of forming an array of multi-component oxide heterostructures, the method comprising:
- exposing a substrate comprising a LaAlO3 top layer to a digital beam in a first chamber comprising a focused ion beam to introduce site specific surface nucleation;
- moving the exposed substrate into a second chamber to induce thermal activation of said substrate;
- moving the thermally activated substrate into a third chamber;
- introducing a lanthanum containing precursor into the third chamber;
- introducing a vanadium containing precursor into the third chamber;
- introducing a second lanthanum precursor into the third chamber;
- introducing an aluminum precursor into the third chamber;
- controlling the introducing of the lanthanum containing precursor and the introducing of the vanadium containing precursor to form by patterned atomic layer deposition a dielectric layer comprising LaVO3 having a dielectric layer thickness of 5 to 20 unit cells to form a well-defined high density array of multi-component oxide heterostructures;
- and
- controlling the introducing of the second lanthanum containing precursor and the introducing of the aluminum containing precursor to form by patterned atomic layer deposition a thin dielectric capping layer comprising LaAlO3 having a capping layer thickness of 2 to 4.5 unit cells.
Dependencies are inferred from the claim text.