Method of forming solid blind vias through the dielectric coating on high density interconnect (HDI) substrate materials

A method of forming solid blind vias through a dielectric coating on a high density interconnect substrate, comprising:

• forming a first substrate by
• (a) applying an electrodepositable dielectric coating onto a conductive surface;
• (b) curing the electrodepositable dielectric coating;
• (c) depositing an adhesion layer and a seed layer onto the electrodepositable dielectric coating;
• (d) applying a layer of a first removable material to the seed layer;
• (e) forming openings in the first removable material to expose areas of the seed layer;
• (f) electroplating a first conductive material to the exposed areas of the seed layer;
• (g) applying a layer of a second removable material;
• (h) forming openings in the second removable material to expose areas of the first conductive material;
• (i) plating a second conductive material to the exposed areas of the first conductive material;
• (j) removing the first and second removable materials;
• (k) removing unplated portions of the seed layer;
• repeating steps (a) through (k) to form a second substrate;
• and
• laminating the first and second substrates together with a layer of dielectric material between the first and second substrates to form at least one interconnect between the first and second substrates.