Semiconductor device and method of forming interconnect structure with conductive pads having expanded interconnect surface area for enhanced interconnection properties

A method of making a semiconductor device, comprising:

• providing a substrate;
• forming a first insulating layer over the substrate;
• forming a plurality of first conductive pads over the substrate;
• expanding an interconnect surface area of the first conductive pads by forming a plurality of recesses partially into the first conductive pads while retaining a portion of the first conductive pads under the recesses to expand an interconnect surface area of the first conductive pads;
• removing the first insulating layer to expose a sidewall of the first conductive pads;
• providing a semiconductor die including a plurality of interconnect structures formed over a surface of the semiconductor die;
• and
• disposing the semiconductor die over the substrate with the interconnect structures contacting the expanded interconnect surface area of the first conductive pads to increase bonding strength of the interconnect structures to the first conductive pads.

A method of making a semiconductor device, comprising:

• providing a substrate;
• forming a first insulating layer over the substrate including a plurality of openings disposed over the substrate;
• forming a plurality of first conductive pads within the openings of the first insulating layer over the substrate;
• expanding an interconnect surface area of the first conductive pads by forming a plurality of recesses partially into the first conductive pads while retaining a portion of the first conductive pads under the recesses;
• removing the first insulating layer to expose sidewalls of the first conductive pads;
• and
• disposing a semiconductor die over the substrate including a plurality of bumps contacting the interconnect surface area and sidewalls of the first conductive pads.

A semiconductor device, comprising:

• a substrate;
• a plurality of first conductive pads formed over the substrate, the first conductive pads including an expanded interconnect surface area comprising a sidewall of the first conductive pads and a plurality of recesses formed partially into the first conductive pads while retaining a portion of the first conductive pads under the recesses;
• and
• a semiconductor die including a plurality of interconnect structures formed over a surface of the semiconductor die, wherein the semiconductor die is disposed over the substrate with the interconnect structures contacting the expanded interconnect surface area of the first conductive pads to increase bonding strength of the interconnect structures to the first conductive pads.