Semiconductor device and method of forming vertically offset bond on trace interconnect structure on leadframe

A method of making a semiconductor device, comprising:

• providing a substrate having a plurality of lead fingers;
• forming a first conductive layer over the lead fingers;
• forming a second conductive layer over the lead fingers, the first and second conductive layers being interposed in an alternating arrangement with respect to each other, the second conductive layer including a thickness different than a thickness of the first conductive layer;
• and
• forming an interconnect structure over the first conductive layer and second conductive layer with a width of the interconnect structure greater than a width of the first and second conductive layers and the interconnect structure formed over the first conductive layer overlapping the interconnect structure formed over the second conductive layer.

A method of making a semiconductor device, comprising:

• providing a substrate having a plurality of lead fingers;
• and
• forming a bump on trace (BOT) interconnect structure over the lead fingers by,
• (a) forming a first conductive layer over the lead fingers,
• (b) forming a second conductive layer over the lead fingers, the first and second conductive layers being interposed in an alternating arrangement with respect to each other, the second conductive layer comprising a height different than a height of the first conductive layer, and
• (c) forming a plurality of bumps over the first and second conductive layers with a width of the bumps greater than a width of the first and second conductive layers and the bumps formed over the first conductive layer overlapping the bumps formed over the second conductive layer.

A method of making a semiconductor device, comprising:

• providing a substrate adapted for mounting a semiconductor die for structural support and interconnection, the substrate including,
• a first lead finger comprising a first height, and
• a second lead finger adjacent to the first lead finger and comprising a second height different from the first height of the first lead finger;
• forming a first interconnect structure over the first lead finger;
• and
• forming a second interconnect structure over the second lead finger with a width of the first and second interconnect structures greater than a width of the first and second lead fingers and the first interconnect structure overlapping the second interconnect structure.