Solar cell structures, photovoltaic panels and corresponding processes

A method for forming a doped semiconductor structure, the method comprising:

• printing a dopant ink in a pattern onto a first surface of a semiconductor sheet comprising silicon, wherein the dopant ink comprises doped silicon nanoparticles having an average primary particle diameter of no more than about 100 nm;
• and
• forming a first doped contact localized in a region along the semiconductor surface by heating the doped silicon nanoparticles patterned on the semiconductor surface, wherein dopant from the printed ink patterned on the first surface of the semiconductor is driven into the semiconductor sheet during the heating and the doped silicon nanoparticles are incorporated into the first doped contact having a doped silicon structure extending into the semiconductor sheet and protruding as a local structure above the semiconductor sheet.