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US 8,409,974 B2Granted
Strained-silicon-on-insulator single-and double-gate MOSFET and method for forming the same
AssigneeInternational Business Machines Corporation
InventorsGuy Moshe Cohen, Patricia May Mooney
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Abstract
A method of forming a semiconductor structure (and the resulting structure), includes straining a free-standing semiconductor, and fixing the strained, free-standing semiconductor to a substrate.
Claims14
A method of forming a semiconductor structure, comprising:
- providing a substrate;
- forming a layer above the substrate;
- forming a pedestal between the layer and the substrate, said forming said pedestal comprising:
- etching a cavity into said layer;
- and
- filling said cavity with a first material to form said pedestal;
- and
- straining an entirety of the layer, said straining comprising supporting the layer at a single point by the pedestal to form a free-standing semiconductor;
- and
- fixing the free-standing semiconductor to the substrate.
7 more elements
A method, comprising:
- providing a silicon-on-insulator substrate, comprising:
- a silicon substrate;
- a buried oxide layer disposed above the silicon substrate;
- and
- a silicon-on-insulator layer disposed above the buried oxide layer;
- etching a cavity through the silicon-on-insulator layer and the buried oxide layer;
- filing the cavity to form a pedestal;
- growing a fully strained SiGe layer above the silicon-on-insulator layer;
- growing a silicon cap layer above the fully strained SiGe layer;
- and
- forming a free-standing structure supported only at the pedestal by etching the buried oxide layer to completely remove the buried oxide layer.
8 more elements
Dependencies are inferred from the claim text.