Separation apparatus, separation method, and method for manufacturing semiconductor element

A method for manufacturing a semiconductor element, comprising the steps of:

• forming a stack of a semiconductor element layer including a thin film transistor, a separation layer over the semiconductor element layer, and a holding substrate over the separation layer;
• exposing a portion of the semiconductor element layer by removing a portion of the holding substrate and a portion of the separation layer;
• holding the stack over a porous body having a rounded corner portion by creating suction in the porous body;
• curving a part of the semiconductor element layer along the rounded corner portion of the porous body by pressing down the exposed portion of the semiconductor element layer;
• providing a space between the semiconductor element layer and the holding substrate by the curving;
• and
• lifting the holding substrate so that separation of the semiconductor element layer and the holding substrate proceeds from the space through the separation layer.

A separation method comprising the steps of:

• forming a stack of a semiconductor element layer, a separation layer over the semiconductor element layer, and a holding substrate over the separation layer;
• exposing a portion of the semiconductor element layer by removing a portion of the holding substrate and a portion of the separation layer;
• holding the stack over a stage having a rounded corner portion by creating suction in the stage;
• curving a part of the semiconductor element layer along the rounded corner portion of the stage by pressing down the exposed portion of the semiconductor element layer;
• providing a space between the semiconductor element layer and the holding substrate by the curving;
• and
• lifting the holding substrate so that separation of the semiconductor element layer and the holding substrate proceeds from the space through the separation layer.

A method for manufacturing a semiconductor element, comprising the steps of:

• forming a stack of a semiconductor element layer including a thin film transistor, a separation layer over the semiconductor element layer, and a holding substrate over the separation layer;
• exposing a portion of the semiconductor element layer by removing a portion of the holding substrate and a portion of the separation layer;
• holding the stack over a stage having a rounded corner portion by creating suction in the stage;
• curving a part of the semiconductor element layer along the rounded corner portion of the stage by pressing down the exposed portion of the semiconductor element layer;
• providing a space between the semiconductor element layer and the holding substrate by the curving;
• and
• lifting the holding substrate so that separation of the semiconductor element layer and the holding substrate proceeds from the space through the separation layer.