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US 8,409,972 B2Granted
Light emitting diode having undoped and unintentionally doped nitride transition layer
AssigneeCree, Inc.
InventorsMichael J. Bergmann, Daniel C. Driscoll, David T. Emerson
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Abstract
A method of forming electronic device precursors and devices with reduced cracking in relevant layers is disclosed along with resulting structures. The method includes the steps of growing a transition layer of undoped Group III nitride on a substrate that is other than a Group III nitride, growing an active structure of Group III nitride on the undoped layer, and removing the substrate from the undoped layer.
Claims14
A light emitting diode comprising:
- a Group III nitride transition layer having a thickness of between about 0.3 and 1.0 microns and a dopant concentration less than 1E17 cm−3;
- an n-type Group III nitride doped layer directly on said Group III nitride transition layer;
- a first ohmic contact that extends from the n-type Group III nitride doped layer through an opening in the Group III nitride transition layer;
- at least one active layer on said Group III nitride doped layer opposite to the Group III nitride transition layer;
- a p-type Group III nitride layer on said at least one active layer opposite to the Group III nitride doped layer configured to generate light emission when current is applied across said p-type Group III nitride and said n-type Group III nitride doped layer;
- and
- a second ohmic contact that extends from the p-type Group III nitride layer, wherein the first and second ohmic contacts are used to apply the current across said p-type Group III nitride layer and said n-type Group III nitride doped layer.
4 more elements
Dependencies are inferred from the claim text.