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US 8,409,961 B2Granted
Alteration method and alteration apparatus for titanium nitride
AssigneeTokyo Electron Limited
InventorsTakuya Sugawara, Yoshihiro Sato
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Abstract
An alteration method of a titanium nitride film, comprising exposing a titanium nitride film formed on a semiconductor substrate to plasma obtained by exciting a process gas that includes noble gas or nitrogen and excludes oxygen, thereby increasing a specific resistance of the titanium nitride film.
Claims6
An alteration method of a titanium nitride film, comprising
- exposing a titanium nitride film formed on a semiconductor substrate to plasma obtained by exciting a process gas, thereby increasing a specific resistance of the titanium nitride film,
- wherein the titanium nitride film is a heater film provided to be in contact with a phase-changing film whose resistance can be changed depending on at least one of a heating temperature and a heating time, and
- wherein the process gas consists of a normal gas or a combination of nitrogen and one noble gas.
An alteration apparatus of a titanium nitride film, comprising:
- an air-tight process chamber that has a susceptor on which is placed a semiconductor substrate having the titanium nitride film in the process chamber, wherein the titanium nitride film is a heater film provided to be in contact with a phase-changing film whose resistance can be changed depending on at least one of a heating temperature and a heating time;
- a process gas supplying part that supplies a process gas to the process chamber, wherein the process gas consists of a noble gas or a combination of nitrogen and one noble gas;
- a plasma generating part that excites the process gas to plasma;
- and
- an evacuating part that evacuates the process chamber.
2 more elements
Dependencies are inferred from the claim text.