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US 8,409,959 B2Granted
Vertically base-connected bipolar transistor
AssigneeMicron Technology, Inc.
InventorsBadih El-Kareh, Leonard Forbes, Kie Y. Ahn
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Abstract
Methods, devices, and systems for using and forming vertically base-connected bipolar transistors have been shown. The vertically base-connected bipolar transistors in the embodiments of the present disclosure are formed with a CMOS fabrication technique that decreases the transistor size while maintaining the high performance characteristics of a bipolar transistor.
Claims9
A method for forming a bipolar transistor, comprising:
- forming a collector on a semiconductor substrate;
- vertically forming a single crystal silicon pillar above the collector;
- forming an emitter above the pillar;
- forming a base to connect the emitter and collector;
- and
- forming a number of base links in the single crystal silicon pillar each having an upper surface that contacts a bottom surface of an intrinsic base region and vertically links an extrinsic base region to the intrinsic base region to form a vertical base contact by actively driving dopants horizontally from the extrinsic base region into the single crystal silicon pillar, wherein the number of base links are at least partially in an area below the emitter and at least partially in an area between a first sidewall of the emitter and a second sidewall of the emitter.
3 more elements
Dependencies are inferred from the claim text.