Method of manufacturing semiconductor device
AssigneeFujitsu Semiconductor Limited
InventorsKatsuaki Ookoshi, Masatoshi Nishikawa, Yosuke Shimamune
Life of this patent
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Abstract
A method of manufacturing a semiconductor device is provided. The method includes forming a gate electrode on a semiconductor substrate; forming a dopant implantation area in the semiconductor substrate by implanting a dopant in the semiconductor substrate, using the gate electrode as a mask; forming sidewalls on the gate electrode; forming a first recess by etching the semiconductor substrate, using the gate electrode and the sidewalls as a mask; forming a second recess by removing the dopant implantation area positioned below the sidewalls; and forming a source area and a drain area by causing a semiconductor material to grow in the first recess and the second recess.
Claims15
A method of manufacturing a semiconductor device, the method comprising:
- forming a first gate electrode above a semiconductor substrate;
- forming a dopant implantation area in the semiconductor substrate by implanting a dopant in the semiconductor substrate, using the first gate electrode as a mask;
- forming sidewall spacers on the first gate electrode;
- forming a first recess having a first depth and exposing the dopant implantation area within the first recess at least at a bottom of the first recess by etching the semiconductor substrate, using the first gate electrode and the sidewall spacers as a mask;
- forming a second recess having a second depth shallower than the first depth and exposing the dopant implantation area within the second recess by removing a part of the dopant implantation area positioned below the sidewall spacers;
- and
- forming a source area and a drain area by causing a semiconductor material to grow in the first recess and the second recess,
- wherein each of the first depth and the second depth is a distance taken from a bottom surface of the first gate electrode towards a bottom of the semiconductor substrate along a direction perpendicular to the bottom surface of the first gate electrode.
Dependencies are inferred from the claim text.