Method of forming an electronic device including forming a charge storage element in a trench of a workpiece

A method of forming an electronic device comprising:

• forming a first trench in a workpiece including a substrate, the first trench having side walls and a bottom surface extending for a width between the side walls;
• forming a charge-storage layer along the side walls and bottom surface of the first trench;
• forming spacers along the side walls of the first trench overlying the charge-storage layer;
• subsequent to forming the spacers, implanting ions within the substrate underlying the bottom surface of the first trench to form an implant region;
• etching, after forming the spacers, at least a portion of the charge-storage layer;
• removing the spacers after etching;
• and
• annealing the implant region, wherein after annealing, the implant region extends the width of the bottom surface and along a portion of the side walls.