Producing transistor including multi-layer reentrant profile

A method of producing a transistor comprising:

• providing a substrate including in order a first electrically conductive material layer, a second electrically conductive material layer, and a third electrically conductive material layer, the first electrically conductive material layer being in contact with the second electrically conductive material layer, the second electrically conductive material layer being in contact with the third electrically conductive material layer;
• depositing a resist material layer over the third electrically conductive material layer;
• patterning the resist material layer to expose a portion of the third electrically conductive material layer;
• removing some of the third electrically conductive material layer to expose a portion of the second electrically conductive material layer;
• causing the third electrically conductive material layer to overhang the second electrically conductive material layer by removing some of the second electrically conductive material layer;
• and
• removing some of the first electrically conductive material layer.