Semiconductor device manufacturing method
AssigneeOki Semiconductor Co., Ltd.
InventorsMakoto Terui, Yasushi Shiraishi
Life of this patent
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Abstract
A BGA substrate which has a back surface to which a heat radiating plate is attached and an opening for accommodating a relay wiring substrate therein, which is provided in the center of its surface, is used. The relay wiring substrate to which an ASIC chip and a memory chip are flip-chip connected, is bonded to the heat radiating plate in the opening with a thermal conductive bonding material. Further, each of the back surfaces of the ASIC chip and the memory chip is connected to a metal cap for sealing the opening through a thermal conductive material interposed therebetween.
Claims20
A method for manufacturing a semiconductor device, comprising:
- mounting a plurality of semiconductor chips over a relay wiring substrate by flip-chip connections;
- bonding a heat radiating plate to a back surface of a main wiring substrate which has an opening therethrough;
- bonding the relay wiring substrate equipped with the semiconductor chips to the heat radiating plate in the opening of the main wiring substrate using a bonding material having thermal conductivity;
- connecting bonding wires between the relay wiring substrate and the main wiring substrate;
- applying a thermal conductive material to each of back surfaces of the semiconductor chips;
- and
- covering the opening of the main wiring substrate with a metal sealing plate, so that the metal sealing plate is connected to the semiconductor chips by the thermal conductive material.
A method for manufacturing a semiconductor device, comprising:
- mounting a plurality of semiconductor chips over a relay wiring substrate by flip-chip connections;
- bonding a heat radiating plate to a back surface of a main wiring substrate which has an opening therethrough;
- bonding the relay wiring substrate equipped with the semiconductor chips to the heat radiating plate in the opening of the main wiring substrate using a bonding material having thermal conductivity;
- connecting bonding wires between the relay wiring substrate and the main wiring substrate;
- filling the opening of the main wiring substrate with a thermal conductive material;
- and
- covering the opening of the main wiring substrate with a metal sealing plate.
A method for manufacturing a semiconductor device, comprising:
- mounting a plurality of semiconductor chips over a relay wiring substrate by flip-chip connections;
- bonding a heat radiating plate to a back surface of a main wiring substrate which has an opening therethrough;
- bonding the relay wiring substrate equipped with the semiconductor chips to the heat radiating plate in the opening of the main wiring substrate using a bonding material having thermal conductivity;
- connecting bonding wires between the relay wiring substrate and the main wiring substrate;
- and
- attaching a metal sealing plate to the main wiring substrate to cover the opening and so that the metal sealing plate is in thermal contact with the semiconductor chips via a thermal conductive material.
Dependencies are inferred from the claim text.