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US 8,409,929 B2Granted
Forming a semiconductor package including a thermal interface material
AssigneeIntel Corporation
InventorsMukul Renavikar, Daewoong Suh, Carl Deppisch, Abhishek Gupta
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Abstract
In one embodiment, the present invention includes a method for placing a thermal interface material (TIM) between a die including a backside metallic (BSM) layer including copper (Cu) and a heat spreader having a contact surface including Cu, where the TIM is formed of an alloy including indium (In) and tin (Sn), and bonding the TIM to the die and the heat spreader to form at least one quaternary intermetallic compound (IMC) layer. Other embodiments are described and claimed.
Claims14
A method comprising:
- adapting a die having a metallization structure on a backside thereof, the metallization structure including a first nickel-copper (Ni—Cu) layer on the backside, to a heat spreader formed of a conductive material and having a second Ni—Cu layer, via a thermal interface material (TIM) formed from an alloy including indium (In), tin (Sn) and copper (Cu), wherein a weight percentage of the Sn is less than about 10%, a weight percentage of the Cu is less than about 3%, and the TIM has a gold (Au) coating adapted on a first side and a second side thereof.
A method comprising:
- adapting a semiconductor die having a metallization structure on a first side thereof, the metallization structure including a first nickel-copper (Ni—Cu) layer, to a heat spreader formed of a conductive material and having a contact surface covered with a second Ni—Cu layer, via a thermal interface material (TIM) formed of a core including indium (In), tin (Sn) and copper (Cu), the TIM having a weight percentage of the Cu of less than about 3%, and a weight percentage of the Sn of less than about 10%.
A method comprising:
- placing a thermal interface material (TIM) between a die including a backside metallic (BSM) layer including copper (Cu) and a heat spreader having a contact surface including Cu, wherein the TIM is formed of an alloy including indium (In), tin (Sn), and Cu, including forming the TIM alloy of less than approximately 10% weight Sn and less than approximately 3% weight Cu;
- and
- bonding the TIM to the die and the heat spreader, wherein the bonding is to reflow the TIM to form at least one quaternary intermetallic compound (IMC) layer.
Dependencies are inferred from the claim text.