Methods of forming memory cells

A method of forming a plurality of memory cells, comprising:

• forming spaced-apart conductive lines extending along a first axis;
• forming spaced-apart lines of programmable material over the conductive lines and extending along a second axis which intersects the first axis;
• the programmable material comprising high k dielectric material directly against multivalent metal oxide;
• wherein the conductive lines are first conductive lines within a first level of columns, and wherein the lines of programmable material are first lines of programmable material, and further comprising;
• forming a plurality of second conductive lines in one-to-one corresponding with the first lines of programmable material and extending along the second axis, the second conductive lines and the first lines of programmable material together being within a first level of rows that extends along the second axis;
• forming a second level of columns over the first level of rows, the second level of columns comprised third conductive lines extending along the first axis;
• and
• forming a second level of rows over the second level of columns;
• the second level of rows extending along the second axis, and comprising second lines of programmable material together with fourth conductive lines;
• the second lines of programmable material comprising high k dielectric material directly against multivalent metal oxide;
• the fourth conductive lines being electrically coupled to the second lines of programmable material through top electrode material that directly contacts the fourth conductive lines and directly contacts the high k dielectric material of the second lines of programmable material.

A method of forming a plurality of memory cells, comprising:

• forming first conductive lines within first trenches in a first dielectric material;
• the first trenches extending along a first axis;
• forming second dielectric material over the first dielectric material, and patterning the second dielectric material to have openings extending therethrough to the first conductive lines;
• forming memory cells within the openings, each of the memory cells comprising programmable material sandwiched between top and bottom electrodes;
• the programmable material comprising a high k dielectric portion directly against a multivalent metal oxide portion;
• forming a third dielectric material over the second dielectric material and patterning the third dielectric material to have second trenches over the memory cells, the second trenches extending along a second axis which intersects the first axis;
• and
• forming second conductive lines within the second trenches.

A method of forming a plurality of memory cells, comprising:

• forming first conductive lines extending along a first axis;
• forming spaced-apart bottom electrodes along each of the conductive lines;
• forming programmable material over and in direct contact with the bottom electrodes;
• the programmable material comprising a high k dielectric portion directly against a multivalent metal oxide portion;
• forming top electrode material over and directly against the high k dielectric portion of the programmable material;
• forming patterned electrically conductive hard mask material over the top electrode material;
• the patterned hard mask material comprising masking lines extending along a second axis which is substantially perpendicular to the first axis;
• transferring a pattern from the patterned electrically conductive hard mask material into the top electrode material to pattern the top electrode material into lines;
• the programmable material comprising cell regions directly between top electrode material lines and bottom the electrodes, and comprising intervening regions between the cell regions;
• and
• forming second conductive lines directly over the masking lines, the second conductive lines extending along the second axis.

A method of forming a plurality of memory cells, comprising:

• forming a first conductive line within a first trench in a first dielectric material;
• the first trench extending along a first axis;
• forming second dielectric material over the first dielectric material, and patterning the second dielectric material to have openings extending therethrough to the first conductive line;
• forming bottom electrode material along bottoms of the openings:
• forming multivalent metal oxide within the openings over the bottom electrode material, the multivalent metal oxide and bottom electrode material together forming a plurality of memory cell plugs;
• forming an expanse of high k dielectric material that extends across the memory cell plugs;
• forming a protective layer over the high k dielectric material;
• forming a third dielectric material over the protective layer and patterning the third dielectric material to have second trenches over the protective layer, the second trenches extending along a second axis which intersects the first axis;
• extending the second trenches through the protective layer to an upper surface of the high k dielectric material;
• forming top electrode material within bottoms of the second trenches;
• and
• forming second conductive lines over the top electrode material within the second trenches.

A method of forming a plurality of memory cells, comprising:

• forming a first conductive line extending along a first axis;
• forming first electrode material along the first conductive line;
• forming an expanse of first programmable material over and in direct contact with the first electrode material;
• the first programmable material comprising a first high k dielectric portion over and directly against a first multivalent metal oxide portion;
• forming second electrode material over the first programmable material;
• forming patterned electrically conductive hard mask material over the second electrode material;
• the patterned hard mask material comprising spaced-apart masking features;
• transferring a pattern from the patterned electrically conductive hard mask material into the second electrode material;
• the patterned second electrode material comprising spaced-apart segments;
• the first programmable material comprising first cell regions directly beneath the second electrode material segments, and comprising first intervening regions between the first cell regions;
• forming electrically conductive structures over the masking features of the electrically conductive hard mask material;
• the electrically conductive structures including second conductive lines that extend along a second axis which is substantially perpendicular to the first axis;
• the electrically conductive structures having upper pedestals, the upper pedestals having caps corresponding to third electrodes;
• forming an expanse of second programmable material over and in direct contact with the third electrode caps;
• the second programmable material comprising a second multivalent metal oxide portion over and directly against a second high k dielectric portion;
• forming fourth electrodes over and directly against the second programmable material;
• the second programmable material comprising second cell regions directly beneath the fourth electrodes, and comprising second intervening regions between the second cell regions, and
• forming a third conductive line extending across the fourth electrodes.