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US 8,409,914 B2Granted
Method for fabricating resistive memory device
AssigneeHynix Semiconductor Inc.
InventorMin-Gyu Sung
Life of this patent
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Abstract
A method for fabricating a resistive memory device includes forming a lower electrode including a metal nitride layer over a substrate, forming a metal oxide layer used as a variable resistance material by oxidizing a part of the metal nitride layer, and forming an upper electrode on the metal oxide layer.
Claims15
A method for fabricating a resistive memory device, the method comprising:
- forming a lower electrode including a metal nitride layer over a substrate, wherein the metal nitride layer comprises one selected from a tungsten nitride (WN) layer, a tantalum nitride (TaN) layer, a molybdenum nitride (MoN) layer and a combination thereof;
- forming a metal oxide layer used as a variable resistance material by oxidizing a part of the metal nitride layer;
- and
- forming an upper electrode on the metal oxide layer, wherein the upper electrode includes a metal nitride layer.
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A method for fabricating a resistive memory device, the method comprising:
- forming a lower electrode over a substrate, wherein the lower electrode comprises one selected from a tungsten nitride (WN) layer, a tantalum nitride (TaN) layer, a molybdenum nitride (MoN) layer and a combination thereof;
- forming a variable resistance material layer on the lower electrode by supplying an oxygen gas into a chamber where the lower electrode is deposited;
- and
- forming an upper electrode on the variable resistance material layer, wherein the upper electrode includes a metal nitride layer.
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A method for fabricating a resistive memory device, the method comprising:
- forming a lower electrode over a substrate, wherein the lower electrode includes a material whose oxidation is suppressed in a selective oxidation process, wherein the lower electrode comprises a tungsten (W), a molybdenum (Mo) layer or a combination thereof;
- forming a material layer on the lower electrode, wherein the material layer is prone to being oxidized in the selective oxidation process;
- forming a variable resistance material layer by selectively oxidizing the material layer through the selective oxidation process, wherein the selective oxidation process is performed in a H2 rich oxidation atmosphere, wherein the variable resistance material layer comprises metal oxide selected from a tungsten oxynitride (WON) layer, a tantalum oxynitride (TaON) layer, a molybdenum oxynitride (MOON) layer and a combination thereof;
- and
- forming an upper electrode on the variable resistance material layer.
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Dependencies are inferred from the claim text.