Optical sensor and method for making the same

A method for making an optical sensor in which the first to x-th (X is an even integer of 2 or more) semiconductor fine particle layers composed of n-type semiconductor fine particles are sequentially stacked in order on a pattern portion of a surface of a substrate coated with a coating film composed of a first film compound having a first functional group and a first bonding group at respective two ends of the molecule in a direction from the coated substrate side toward a rear electrode side;

• and
• in which the (x+1)-th to y-th (y is an integer satisfying y≧x+1) semiconductor fine particle layers composed of p-type semiconductor fine particles are sequentially stacked thereon in order, the method comprising:
• bringing a solution comprising the first film compound into contact with a surface of a substrate so as to form a coated substrate;
• irradiating the surface of the coated substrate with an energy beam through a mask that covers a pattern portion so as to allow the coating film composed of the first film compound to remain on the pattern portion;
• bringing a solution comprising a second film compound into contact with at least a first portion of the n-type semiconductor fine particles so as to form coated n-type semiconductor fine particles;
• bringing a solution comprising the second film compound into contact with at least a first portion of the p-type semiconductor fine particles so as to form coated p-type semiconductor fine particles;
• bringing a first coupling agent into contact with the coated substrate so as to prepare a reactive coated substrate having a coating film of the first coupling agent on the coating film composed of the first film compound;
• bringing a solution comprising a third film compound into contact with at least a second portion of the n-type semiconductor fine particles so as to bond the third film compound to the n-type semiconductor fine particles;
• bringing a second coupling agent into contact with at least the second portion of the n-type semiconductor fine particles so as to prepare reactive n-type semiconductor fine particles having surfaces with a coating film composed of the second coupling agent;
• bringing a solution comprising a fourth film compound into contact with at least a second portion of the p-type semiconductor fine particles so as bond the fourth film compound to the p-type semiconductor fine particles;
• bringing a third coupling agent into contact with at least the second portion of the p-type semiconductor fine particles so as to prepare reactive p-type semiconductor fine particles having surfaces with a coating film composed of the third coupling agent;
• bringing at least some of the coated n-type semiconductor fine particles into contact with the coating film of the first coupling agent so as to form a first semiconductor layer fixed to a surface of the reactive coated substrate;
• alternately stacking the coated n-type semiconductor fine particles and the reactive n-type semiconductor fine particles on the first semiconductor layer and fixing them so as to form first to x-th semiconductor fine particle layers composed of n-type semiconductor fine particles that are sequentially stacked in order;
• alternately stacking the coated p-type semiconductor fine particles and the reactive p-type semiconductor particles on the fine particle layer of the reactive n-type semiconductor fine particles located at the top of the first to x-th semiconductor fine particle so as to form (x+1)-th to y-th semiconductor fine particle layers composed of p-type semiconductor fine particles that are sequentially stacked in order;
• and
• forming a rear electrode on the top of the (x+1)-th to y-th semiconductor fine particle films.

A method for making an optical sensor in which the first to x-th (X is an odd integer of 1 or more) semiconductor fine particle layers composed of n-type semiconductor fine particles are sequentially stacked only on a pattern portion of a surface of a substrate coated with a coating film composed of a first film compound having a first functional group and a first bonding group at respective two ends of the molecule in a direction from the coated substrate side toward a rear electrode side and in which the (x+1)-th to y th (y is an integer satisfying y≧x+1) semiconductor fine particle layers composed of p-type semiconductor fine particles are further sequentially stacked thereon in order, the method comprising:

• bringing a solution comprising the first film compound into contact with a surface of a substrate so as to form a coated substrate;
• irradiating the surface of the coated substrate with an energy beam through a mask that covers a pattern portion so as to allow the coating film composed of the first film compound to remain on the pattern portion;
• bringing a solution comprising a second film compound into contact with at least a first portion of the n-type semiconductor fine particles so as to form coated n-type semiconductor fine particles;
• bringing a solution comprising the second film compound into contact with at least a first portion of the p-type semiconductor fine particles so as to form coated p-type semiconductor fine particles;
• bringing a first coupling agent into contact with the coated substrate so as to prepare a reactive coated substrate having a coating film of the first coupling agent on the coating film composed of the first film compound;
• bringing a solution comprising a third film compound into contact with at least a second portion of the n-type semiconductor fine particles so as to bond the third film compound to the n-type semiconductor fine particles;
• bringing a second coupling agent into contact with at least the second portion of the n-type semiconductor fine particles so as to prepare reactive n-type semiconductor fine particles having surfaces with a coating film composed of the second coupling agent;
• bringing a solution comprising a fourth film compound into contact with at least a second portion of the p-type semiconductor fine particles so as to bond the fourth film compound to the p-type semiconductor fine particles;
• bringing a third coupling agent into contact with at least the second portion of the p-type semiconductor fine particles so as to prepare reactive p-type semiconductor fine particles having surfaces with a coating film composed of the third coupling agent;
• bringing at least some of the coated n-type semiconductor fine particles into contact with the coating film of the first coupling agent so as to form a first semiconductor layer fixed to a surface of the reactive coated substrate;
• alternately stacking the coated n-type semiconductor fine particles and the reactive n-type semiconductor fine particles on the first semiconductor layer and fixing them so as to form first to x-th semiconductor fine particle layers composed of n-type semiconductor fine particles which are sequentially stacked in order;
• alternately stacking the reactive p-type semiconductor fine particles and the coated p-type semiconductor particles on the fine particle layer of the coated n-type semiconductor fine particle located at the top of the first to x-th semiconductor fine particle films and fixing them so as to form (x+1)-th to y-th semiconductor fine particle layers composed of p-type semiconductor fine particles that are sequentially stacked in order;
• and
• forming a rear electrode on the top of the (x+1)-th to y-th semiconductor fine particle films.

A method for making an optical sensor in which the first to x-th (X is an even integer of 2 or more) semiconductor fine particle layers composed of n-type semiconductor fine particles are sequentially stacked in order only on a pattern portion of a surface of a substrate coated with a coating film composed of a first film compound having a first functional group and a first bonding group at respective two ends of the molecule in a direction from the coated substrate side toward a rear electrode side and in which the (x+1)-th to y-th (y is an integer satisfying y≧x+1) semiconductor fine particle layers composed of p-type semiconductor fine particles that are sequentially stacked thereon in order, the method comprising:

• bringing a solution comprising the first film compound into contact with a surface of a substrate so as to form a coated substrate;
• irradiating the surface of the coated substrate with an energy beam through a mask that covers a pattern portion so as to allow the coating film composed of the first film compound to remain on the pattern portion;
• bringing a solution comprising the first film compound into contact with at least a first portion of the n-type semiconductor fine particles so as to form coated n-type semiconductor fine particles;
• bringing a solution comprising the first film compound into contact with at least a first portion of the p-type semiconductor fine particles so as to form coated p-type semiconductor fine particles;
• bringing a solution comprising a second film compound into contact with at least a second portion of the n-type semiconductor fine particles so as to bond the second film compound to the n-type semiconductor fine particles;
• bringing a first coupling agent into contact with the second film compound bonded to the at least the second portion of the n-type semiconductor fine particles so as to prepare reactive coated n-type semiconductor fine particles having surfaces with a coating film composed of the first coupling agent;
• bringing a solution comprising a third film compound into contact with at least a second portion of the p-type semiconductor fine particles so as to bond the third film compound to the p-type semiconductor fine particles;
• bringing a second coupling agent into contact with the third film compound bonded to the at least the second portion of the p-type semiconductor fine particles so as to prepare reactive coated p-type semiconductor fine particles having surfaces with a coating film composed of the second coupling agent;
• alternately stacking the reactive coated n-type semiconductor fine particles and the coated n-type semiconductor fine particles on a surface of the coated substrate and fixing them so as to form first to x-th semiconductor fine particle layers composed of n-type semiconductor fine particles that are sequentially stacked in order;
• alternately stacking the reactive coated p-type semiconductor fine particles and the coated p-type semiconductor particles on the fine particle layer of the coated n-type semiconductor fine particle located on the top of the first to x-th semiconductor fine particle films and fixing them so as to form (x+1)-th to y-th semiconductor fine particle layers composed of p-type semiconductor fine particles that are sequentially stacked in order;
• and
• forming a rear electrode on the top of the (x+1)-th to y-th semiconductor fine particle films.

A method for making an optical sensor in which the first to x-th (X is an odd integer of 1 or more) semiconductor fine particle layers composed of n-type semiconductor fine particles are sequentially stacked only on a pattern portion of a surface of a substrate coated with a coating film composed of a first film compound having a first functional group in a direction from the coated substrate side toward a rear electrode side;

• and in which the (x+1)-th to y-th (y is an integer satisfying y≧x+1) semiconductor fine particle layers composed of p-type semiconductor fine particles are sequentially stacked thereon in order, the method comprising:
• bringing a solution comprising the first film compound into contact with a surface of a substrate so as to form a coated substrate;
• irradiating the surface of the coated substrate with an energy beam through a mask that covers a pattern portion so as to allow the coating film composed of the first film compound to remain on the pattern portion;
• bringing a solution comprising the first film compound into contact with at least a first portion of the n-type semiconductor fine particles so as to form coated n-type semiconductor fine particles;
• bringing a solution comprising the first film compound into contact with at least a first portion of the p-type semiconductor fine particles so as to form coated p-type semiconductor fine particles;
• bringing a solution comprising a second film compound into contact with at least a second portion of the n-type semiconductor fine particles so as to bond the second film compound to the n-type semiconductor fine particles;
• bringing a first coupling agent into contact with the second film compound bonded to the at least the second portion of the n-type semiconductor fine particles so as to prepare reactive coated n-type semiconductor fine particles having surfaces with a coating film composed of the first coupling agent;
• bringing a solution comprising a third film compound into contact with at least a second portion of the p-type semiconductor fine particles so as to bond the third film compound to the p-type semiconductor fine particles;
• bringing a second coupling agent into contact with the third film compound bonded to the at least the second portion of the p-type semiconductor fine particles so as to prepare reactive coated p-type semiconductor fine particles having surfaces with a coating film composed of the second coupling agent;
• alternately stacking the reactive coated n-type semiconductor fine particles and the coated n-type semiconductor fine particles on a surface of the coated substrate and fixing them so as to form first to x-th semiconductor fine particle layers composed of n-type semiconductor fine particles that are sequentially stacked in order;
• alternately stacking the coated p-type semiconductor fine particles and the reactive coated p-type semiconductor particles on the fine particle layer of the reactive n-type semiconductor fine particles located on the top of the first to x-th semiconductor fine particle films and fixing them so as to form (x+1)-th to y-th semiconductor fine particle layers composed of p-type semiconductor fine particles that are sequentially stacked in order;
• and
• forming a rear electrode on the top of the (x+1)-th to y-th semiconductor fine particle films.