Production method of red light emitting semiconductor device

A production method of a red light emitting semiconductor device using GaN, InN, AlN or a mixed crystal composed of any two or more of them,

• wherein
• an active layer obtained by
• adding Eu or Pr to GaN, InN, AlN or a mixed crystal composed of any two or more of them so as to substitute Ga, In or Al
• in a reaction vessel without removing from the reaction vessel halfway
• using an organometallic vapor phase epitaxy method
• with an organometallic vapor phase epitaxy apparatus equipped with a piping valve of high temperature special specification having heat resistant temperature of higher than 100° C.
• under a temperature condition of 900 to 1100° C. thereby keeping the cylinder temperature of organic raw materials at high temperature
• is formed in a series of formation steps including formation of the p-type layer and the n-type layer at a growth speed of 0.1 to 4 μm/h without causing damage to the crystal surfaces, so as to produce a red light emitting semiconductor device having no interface state between the layers, and enabling carriers being implanted efficiently and operation at low voltage.