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US 8,409,895 B2Granted
Gallium nitride-based LED fabrication with PVD-formed aluminum nitride buffer layer
AssigneeApplied Materials, Inc.
InventorsMingwei Zhu, Vivek Agrawal, Nag B. Patibandla, Omkaram Nalamasu
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Abstract
Fabrication of gallium nitride-based light emitting diodes (LEDs) with physical vapor deposition (PVD) formed aluminum nitride buffer layers is described.
Claims15
A method of fabricating a light-emitting diode (LED) structure, the method comprising:
- forming, in a physical vapor deposition (PVD) chamber of a multi-chamber system, an aluminum nitride layer above a substrate, the forming comprising sputtering from an aluminum nitride target housed in the PVD chamber;
- and
- forming, in a second chamber of the multi-chamber system, an un-doped or n-type gallium nitride layer on the aluminum nitride layer.
A method of fabricating a light-emitting diode (LED) structure, the method comprising:
- forming a tungsten (W) layer above a substrate in a first physical vapor deposition (PVD) chamber of a multi-chamber system, the first PVD chamber having a tungsten target;
- forming, in a second PVD chamber of the multi-chamber system, an aluminum nitride layer above the tungsten (W) layer;
- and
- forming, in a third chamber of the multi-chamber system, an un-doped or n-type gallium nitride layer on the aluminum nitride layer.
1 more element
Dependencies are inferred from the claim text.