Solid state light emitting semiconductor structure and epitaxy growth method thereof
AssigneeLextar Electronics Corporation
InventorsChang-Chin Yu, Mong-Ea Lin
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Abstract
A solid state light emitting semiconductor structure and an epitaxy growth method thereof are provided. The method includes the following steps: A substrate is provided. A plurality of protrusions separated from each other are formed on the substrate. A buffer layer is formed on the protrusions, and fills or partially fills the gaps between the protrusions. A semiconductor epitaxy stacking layer is formed on the buffer layer, wherein the semiconductor epitaxy stacking layer is constituted by a first type semiconductor layer, an active layer and a second type semiconductor layer in sequence.
Claims20
An epitaxy growth method of a solid state light emitting semiconductor structure, wherein the method comprises:
- providing a substrate;
- forming a plurality of protrusions separated from each other on the substrate;
- forming a buffer layer on the protrusions, wherein the buffer layer fills or partially fills the gaps between the protrusions;
- and
- forming a semiconductor epitaxy stacking layer on the buffer layer, wherein the semiconductor epitaxy stacking layer is constituted by a first type semiconductor layer, an active layer and a second type semiconductor layer in sequence.
A solid state light emitting semiconductor structure, comprising:
- a substrate;
- a plurality of protrusions separated from each other and formed on the substrate;
- a buffer layer formed on the protrusions, wherein the buffer layer fills or partially fills the gaps between the protrusions;
- and
- a semiconductor epitaxy stacking layer formed on the buffer layer, wherein the semiconductor epitaxy stacking layer is constituted by a first type semiconductor layer, an active layer and a second type semiconductor layer in sequence.
Dependencies are inferred from the claim text.