US 8,409,887 B2Granted

Organic light emitting diode display device and method of fabricating the same

AssigneeSamsung Display Co., Ltd.

InventorsByoung-Keon Park, Tae-Hoon Yang, Jin-Wook Seo, Soo-Beom Jo, Dong-Hyun Lee, Kil-Won Lee, Maxim Lisachenko, Yun-Mo Chung, Bo-Kyung Choi, Jong-Ryuk Park, Ki-Yong Lee

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Abstract

An organic light emitting diode (OLED) display device and a method of fabricating the same are provided. The OLED display device includes a substrate having a thin film transistor region and a capacitor region, a buffer layer disposed on the substrate, a gate insulating layer disposed on the substrate, a lower capacitor electrode disposed on the gate insulating layer in the capacitor region, an interlayer insulating layer disposed on the substrate, and an upper capacitor electrode disposed on the interlayer insulating layer and facing the lower capacitor electrode, wherein regions of each of the buffer layer, the gate insulating layer, the interlayer insulating layer, the lower capacitor electrode, and the upper capacitor electrode have surfaces in which protrusions having the same shape as grain boundaries of the semiconductor layer are formed. The resultant capacitor has an increased surface area, and therefore, an increased capacitance.

Claims14

Dependent claims

A method of fabricating an organic light emitting diode (OLED) display device, the method comprising:

forming a buffer layer on a substrate, wherein the substrate having a thin film transistor region and a capacitor region;
forming an amorphous silicon layer on the buffer layer;
forming a metal catalyst layer on the amorphous silicon layer;
annealing the substrate to crystallize the amorphous silicon layer into a polysilicon layer;
removing the metal catalyst layer;
forming protrusions in the buffer layer while patterning the polysilicon layer to form a semiconductor layer in the thin film transistor region;
forming a gate insulating layer on the substrate to cover the semiconductor layer;
forming a gate electrode on the gate insulating layer to face a region of the semiconductor layer;
forming a lower capacitor electrode on the gate insulating layer in the capacitor region;
forming an interlayer insulating layer on the substrate to cover the gate electrode and the lower capacitor electrode;
forming a source electrode and a drain electrode on the interlayer insulating layer, the source electrode and the drain electrode being electrically connected to the semiconductor layer;
forming an upper capacitor electrode on the interlayer insulating layer to face the lower capacitor electrode;
forming a first electrode on the interlayer insulating layer, the first electrode being electrically connected to one of a source region and a drain region of the semiconductor layer;
forming an organic layer on the first electrode, the organic layer comprising a light emitting layer;
and
forming a second electrode on the organic layer.

13 more elements

Dependencies are inferred from the claim text.