Method of forming a pattern in a semiconductor device and method of forming a gate using the same

A method of manufacturing a semiconductor device, comprising:

• providing a semiconductor substrate comprising a first region and a second region;
• forming an object layer on the substrate across the first region and the second region;
• forming a buffer layer on the object layer;
• forming a first photoresist pattern on the buffer layer in the first region;
• etching the buffer layer using the first photoresist pattern as a mask to form a buffer pattern in the first region;
• forming a spacer on a sidewall of the buffer pattern;
• forming a mask layer on the object layer across the first region and the second region;
• forming a second photoresist pattern on the mask layer on the object layer in the second region of the substrate;
• etching the mask layer on the object layer using the second photoresist pattern as a mask to form a second mask pattern formed on the second region;
• and
• etching the object layer using the spacer and second mask pattern as a mask;
• wherein the object layer comprises a gate electrode layer, a silicon substrate in a field region or a metal layer forming a metal wiring, and
• wherein the step of forming the mask layer occurs after the step of forming the spacer.

A method of manufacturing a semiconductor device, comprising:

• etching an object layer of the semiconductor device using a first hard mask pattern and a second hard mask pattern as a mask, the first hard mask pattern being on the object layer in a first region and the second hard mask pattern being on the object layer in a second region, wherein
• the first hard mask pattern consists essentially of sidewall spacers,
• wherein the second hard mask pattern is formed by the steps of:
• forming a mask layer on the sidewall spacers;
• forming a photoresist pattern on the mask layer;
• and
• etching the mask layer to expose the spacers and, at the same time, to form the second hard mask pattern with the photoresist pattern, and
• wherein the object layer comprises a gate electrode layer, a silicon substrate in a field region or a metal layer forming a metal wiring.

A method of manufacturing a semiconductor device, comprising:

• providing a semiconductor substrate comprising a first region and a second region;
• forming an object layer on the substrate across the first region and the second region;
• forming a buffer layer on the object layer;
• forming a first photoresist pattern on the buffer layer in the first region;
• etching the buffer layer using the first photoresist pattern as a mask to form a buffer pattern in the first region;
• forming a spacer on a sidewall of the buffer pattern;
• forming a mask layer on the object layer across the first region and the second region;
• forming a second photoresist pattern on the mask layer on the object layer in the second region of the substrate;
• etching the mask layer on the object layer using the second photoresist pattern as a mask to form a second mask pattern formed on the second region;
• and
• etching the object layer using the spacer and second mask pattern as a mask;
• wherein the object layer comprises a gate electrode layer, a silicon substrate in a field region or a metal layer forming a metal wiring, and
• wherein the step of etching the mask layer to form a second mask pattern comprises the step of etching the mask layer exposed by the second photoresist pattern, the mask layer having an etching selectivity with respect to the spacer.