Method of manufacturing evaporation donor substrate and method of manufacturing light-emitting device
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsKohei Yokoyama, Yosuke Sato
Life of this patent
Estimating the term…
Loading patent…
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsKohei Yokoyama, Yosuke Sato
Estimating the term…
It is an object to provide a method of manufacturing a light-emitting device, which improves use efficiency of an evaporation material and increases accuracy in forming an evaporated pattern by using an evaporation donor substrate by which a material layer to be a transfer layer is prevented from being excessively evaporated and a desired evaporated pattern can be formed. In a method of manufacturing an evaporation donor substrate, a first substrate which is an evaporation donor substrate is irradiated with first light (laser light) through a second substrate which is a mask substrate, whereby a material layer over the first substrate is patterned. In addition, in a method of manufacturing a light-emitting device, the first substrate provided with the material layer which is patterned by the above method is irradiated with second light, whereby the material layer can be evaporated onto a third substrate which is a deposition target substrate.
A method of manufacturing an evaporation donor substrate, comprising the steps of:
A method of manufacturing a light-emitting device, comprising the steps of:
A method of manufacturing an evaporation donor substrate, comprising the steps of:
A method of manufacturing a light-emitting device, comprising the steps of:
A method of manufacturing an evaporation donor substrate, comprising the steps of:
A method of manufacturing a light-emitting device, comprising the steps of:
Dependencies are inferred from the claim text.