ZnO vapor deposition material, process for producing the same, and ZnO film
AssigneeMitsubishi Materials Corporation
InventorYoshitaka Mayuzumi
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Abstract
A ZnO vapor deposition material for formation of a transparent conductive film or the like consists mainly of a porous ZnO sintered body containing one or more first additive elements selected from Ce, La, Y, Pr, Nd, Pm, and Sm, and second additive elements selected from Al, Ga, Sc, and B. The content of the first additive elements is higher than the content of the second additive elements. The content of the first additive elements is in a range of 0.1 to 14.9% by mass, and the content of the second additive elements is in a range of 0.1 to 10% by mass. The sintered body has a porosity of 3 to 50%.
Claims11
A ZnO vapor deposition material for formation of a transparent conductive film comprising:
- a porous ZnO sintered body containing Ce and Ga,
- wherein the Ce content is higher than the Ga content, the Ce content is in a range of 0.1 to 14.9% by mass, the Ga content is in a range of 0.1 to 10% by mass, and the sintered body has a porosity of 20 to 50%.
Dependencies are inferred from the claim text.