Forming method of amorphous carbon film, amorphous carbon film, multilayer resist film, manufacturing method of semiconductor device, and computer-readable storage medium
AssigneeTokyo Electron Limited
InventorsHiraku Ishikawa, Tadakazu Murai, Eisuke Morisaki
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Abstract
An amorphous carbon film forming method is performed by using a parallel plate type plasma CVD apparatus in which an upper electrode and a lower electrode are installed within a processing chamber, and the method includes: disposing a substrate on the lower electrode; supplying carbon monoxide and an inert gas into the processing chamber; decomposing the carbon monoxide by applying a high frequency power to at least the upper electrode and generating plasma; and depositing amorphous carbon on the substrate. It is desirable that the upper electrode is a carbon electrode.
Claims7
An amorphous carbon film forming method for forming an amorphous carbon film on a substrate by using a plasma CVD apparatus, the method comprising:
- disposing the substrate in a processing chamber;
- supplying a processing gas containing a carbon monoxide gas into the processing chamber;
- generating plasma in the processing chamber;
- decomposing the carbon monoxide gas by the plasma in the processing chamber;
- and
- depositing amorphous carbon on the substrate by using carbon decomposed from the carbon monoxide gas,
- wherein an upper electrode and a lower electrode are installed in the processing chamber,
- in disposing the substrate, the substrate is disposed on the lower electrode,
- in depositing the amorphous carbon, a high frequency power is applied to at least the upper electrode, and
- the upper electrode is made of carbon.
Dependencies are inferred from the claim text.