Back to results
US 8,409,458 B2Granted
Process for reactive ion etching a layer of diamond like carbon
AssigneeTexas Instruments Incorporated
InventorsErika Leigh Shoemaker, Maria Wang, Mary Roby, Stuart Jacobsen
Life of this patent
Estimating the term…
Abstract
Provided is a process for manufacturing a diamond like carbon layer. The process for manufacturing the diamond like carbon layer includes, without limitation, forming a layer of diamond like carbon over a substrate, and reactive ion etching the layer of diamond like carbon.
Claims10
A method of manufacturing a semiconductor device, comprising:
- forming a metal or oxide layer over a semiconductor substrate;
- forming a layer of silicon-doped diamond like carbon (Si-DLC) material of thickness greater than 50 nm on the metal or oxide layer;
- and
- patterning the layer of silicon-doped diamond like carbon material by selectively etching in a reactive ion etching process using SF6.
1 more element
Dependencies are inferred from the claim text.