Registered structure formation via the application of directed thermal energy to diblock copolymer films
AssigneeMicron Technology, Inc.
InventorsDan B. Millward, Eugene P. Marsh
Life of this patent
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Abstract
Methods for fabricating sub-lithographic, nanoscale linear microchannel arrays over surfaces without defined features utilizing self-assembling block copolymers, and films and devices formed from these methods are provided. Embodiments of the methods use a multi-layer induced ordering approach to align lamellar films to an underlying base film within trenches, and localized heating to anneal the lamellar-phase block copolymer film overlying the trenches and outwardly over the remaining surface.
Claims17
A method for forming a polymer material, comprising:
- annealing a first block copolymer material within a trench in a substrate to form a base material comprising an ordered array of polymer domains;
- forming a second block copolymer material over the base material within the trench and over a substrate surface adjacent the trench;
- and
- selectively annealing a portion of the second block copolymer material overlying the base material relative to another portion of the second block copolymer material overlying the substrate surface adjacent the trench to form another ordered array of polymer domains comprising polymer domains registered to corresponding polymer domains of the base material.
A method for forming a polymer material, comprising:
- annealing a first block copolymer material within a trench in a substrate to form a base material comprising an ordered array of polymer domains;
- forming a second block copolymer material on the base material;
- and
- annealing only a portion of the second block copolymer material to form another ordered array of polymer domains comprising polymer domains registered to corresponding polymer domains of the base material.
A method for forming a polymer material, comprising:
- forming a first block copolymer material on surfaces of a trench in a substrate and on a substrate surface adjacent the trench;
- annealing the first block copolymer material to form a base material comprising an ordered array of polymer domains within the trench;
- selectively cross-linking the base material within the trench;
- removing a non-cross-linked portion of the first block copolymer material on the substrate surface adjacent the trench;
- forming a second block copolymer material on the base material within the trench and on the substrate surface adjacent the trench;
- and
- annealing the second block copolymer material only on the base material within the trench to form another ordered array of polymer domains comprising polymer domains registered to corresponding polymer domains of the base material.
A method for forming a polymer material, comprising:
- forming a first block copolymer material on surfaces of a trench in a substrate and on a substrate surface adjacent the trench;
- annealing the first block copolymer material to form an annealed first block copolymer material on the substrate surface adjacent the trench and a base material comprising an ordered array of polymer domains within the trench;
- globally cross-linking the annealed first block copolymer material and the base material;
- masking the base material;
- removing the annealed first block copolymer material to expose the substrate surface adjacent the tele-trench;
- forming a second block copolymer material over the base material and on the exposed substrate surface adjacent the trench;
- and
- annealing the second block copolymer material only overlying the base material to form another ordered array of polymer domains comprising polymer domains registered to corresponding polymer domains of the base material.
A method of forming a polymer material, comprising:
- forming a first block copolymer material in a trench;
- annealing the first block copolymer material to form a base material comprising self-assembled polymer domains;
- forming a second block copolymer material over at least the base material;
- and
- selectively annealing the second block copolymer material overlying the base material to form additional self-assembled polymer domains comprising polymer domains registered to corresponding polymer domains of the base material.
Dependencies are inferred from the claim text.